主持项目情况 [1] 科技部,批准号:G2023009004,基于GaAs衬底晶格匹配的InAs/AlSb超晶格结构及其带间级联激光器制备研究,2023/01-2024/03; [2] 国家自然科学基金面上项目,批准号:61370043,近、中红外波段含Sb DWELL 结构激光器研究,2014/01-2017/12; [3] 国家自然科学基金青年项目,批准号:61006039,采用应变工程原理实现高性能中红外波段DWELL 激光器结构,2010/01-2013/12; [4] 国家自然科学基金面上项目,批准号:60976056,采用位置可控低密度InAs量子点实现量子通讯用单光子源研究,2009/01-2012/12; [5] 中国博士后第60批面上资助,批准号:2016M601396,Pyramid InAsSb量子点的制备及实现单光子源的研究,2016/11-2017/12; [6] 吉林省科技厅重点研发项目,批准号:20180201005SF,有机光伏电站及其绿色高效节能示范应用技术研究,2019/01-2022/12。 学术成果 发表SCI论文 1.Zhanguo Li, Xitong Li, Kexin Ren, Qingqing Yang, and Zhiyuan Xie, Effects of 1,8-diiodooctane on Device Function and Ultrafast Charge Carrier Dynamics in Organic Photovoltaic Blends: A Comparison of Nonfullerene and Fullerene Acceptors, Organic Electronics, 2020 ,81,105690. 2.Zhanguo Li, Xitong Li, Xingdong Lin, Hailong Wang, Yingying Fu, Baohua Zhang, Jiang Wu, Zhiyuan Xie, Highly efficient organic light-emitting diodes employing the periodic microstructured ITO substrate fabricated by holographic lithograph,Organic Electronics, 2019, 75,105438. 3.He Liu; Xueting Yi; Jiang Wu; Youzhan Li; Hao Tang; Zhanguo Li; Yingying Fu,All-Solution-Processed Flexible Semitransparent Organic Solar Cells Based on Sprayed Silver Nanowire Composites as Top Electrodes, Solar Energy Materials and Solar Cells(2023)(Accepted) 4.Qingqing Yang, Xitong Li, Hao Tang, Youzhan Li, Yingying Fu, Zhanguo Li and Zhiyuan Xie, Ultrafast spectroscopic investigation of the effect of solvent additives on charge photogeneration and recombination dynamics in non-fullerene organic photovoltaic blends, J. Mater. Chem. C,2021, 8(20)6724-6733 5.Xingdong Lin, Yunhui Zhu, Baohua Zhang, Xiaofei Zhao, Bing Yao, Yanxiang Cheng, Zhanguo Li, Yi Qu, and Zhiyuan Xie, Highly Efficient TADF Polymer Electroluminescence with Reduced Efficiency Roll-off via Interfacial Exciplex Host Strategy, ACS Appl. Mater. Interfaces, 2018, 10, 47-52. 授权专利4项: 一种多层垂直耦合InAsSb量子点隧道结激光器结构。授权国家发明专利:ZL201210103823.4; 一种定位生长低密度InAs量子点的MBE外延方法,授权国家发明专利号:ZL200910066813.X; 一种大尺寸InGaSb量子点的外延生长方法,授权国家发明专利号:ZL200810051421.1; 采用InGaSb柱形量子点实现高效率1.5µm通讯波段激光器外延结构的外延生长设计及方法,授权国家发明专利号:ZL200910066797.4;
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